Recently, a significant breakthrough has been made in the field of ZnO-based short-wavelength laser technology by researchers from Nanjing University and the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, under the National 863 Project. After extensive research involving over three thousand material growth and process experiments, the team successfully developed the world's first ZnO-based homojunction light-emitting diode (LED) capable of emitting blue and yellow light at room temperature (29°C). This achievement marks a major step forward in the development of efficient and stable optoelectronic devices.
The research addressed several critical technical challenges, including the growth of ZnO materials using metalorganic chemical vapor deposition (MOCVD) equipment, the preparation of ZnO single crystals, the growth of high-quality ZnO thin films, and the doping process. The team also overcame issues related to ohmic contact formation. As a result, they have established a range of proprietary technologies, including ZnO single crystal substrate technology, MOCVD system technology for ZnO, homoepitaxial growth techniques, and in-situ control and activation of p-type doping in ZnO.
This success follows the earlier development of a ZnO-based LED by researchers at Tohoku University in Japan using molecular beam epitaxy, but it demonstrates that China is now fully equipped to compete in the global race for advanced ZnO optoelectronic technologies. The breakthrough not only highlights China’s growing strength in semiconductor research but also opens new possibilities for future applications in lighting, display, and optical communication systems. With this progress, the country is firmly positioned among the world leaders in the development of next-generation light-emitting devices.
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