Singapore researchers have developed a compact, heterogeneous integrated III-V / Si-based laser that includes silicon III-V ridge waveguide gain, III-V family / silicon vertical interconnect (VIAs) and silicon insulators SOI) nanophotonic waveguide cross section This compact laser is small in size and can be integrated on a chip and can be used in a wide variety of industries and is in huge demand, including data communications and storage.
III-V family / silicon structure lasers can be used as a chip light source, with great appeal. However, for such lasers to function, the light must be strictly limited to maximize laser efficiency and be effectively shared or coupled with the optical waveguide of the laser.
Researchers believe that this new structure of the device can not only be used as a silicon light-emitting chip technology, but also as a potential new technology platform. Compared with the traditional optoelectronic systems, it improves manufacturing efficiency and system integration, reducing the space occupied by the chip.
The III-V semiconductor layer is formed by the low temperature plasma-assisted direct wafer bonding method on top of the 300 nm-thick silicon insulating layer and the III-V ridge waveguide gain section is formed by etching on silicon. Group III-V silicon and the same orientation of the silicon insulator are tapered in the 50 μm range to effectively couple the light with the silicon nanophotonic waveguide in the 600 nm range to form III-V family / silicon vertical interconnects (VIAs).
Fabry-Perot (FP) lasers made with this device have a CW laser threshold current of 65 mA at room temperature and a single side ramp efficiency of 144 mW / A. When the current is 100mA, the maximum single-side transmit power is about 4.5MW and the side mode rejection ratio is around30dB.
The new compact heterogeneous integrated III-V family / silicon-based laser sub-system chip laser structure complexity increased.
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